07

2025-07

The semiconductor industry is developing in multiple dimensions, with innovation breakthroughs and market recovery advancing simultaneously

Recently, the semiconductor industry has received frequent good news, showing a positive trend in technological innovation, market performance, and industrial activities, demonstrating strong development vitality and potential.

Key breakthroughs have been made in technological innovation

A research team at the Massachusetts Institute of Technology (MIT) has successfully developed an innovative low-cost, scalable manufacturing technology that can integrate high-performance gallium nitride (GaN) transistors onto standard silicon chips. Gallium nitride, as the second largest semiconductor material in the world, has high-frequency and high-efficiency characteristics and is widely used in fields such as radar and power electronics. However, its high cost and compatibility issues with silicon-based chips have long hindered the progress of commercial applications. The new solution proposed by the MIT team this time involves densely manufacturing micro transistors on the surface of gallium nitride wafers, cutting them into tiny independent units called "dielets", and then using copper pillar low-temperature bonding technology to accurately embed them into silicon complementary metal oxide semiconductor (CMOS) chips. This' divide and conquer 'strategy utilizes specialized tools to achieve nanoscale positioning and low-temperature bonding below 400 degrees Celsius. Compared to traditional gold bonding processes, it has lower costs, better conductivity, and is compatible with existing semiconductor production lines. The experimental results show that the power amplifier chip produced surpasses silicon-based devices in terms of wireless signal strength and energy efficiency, providing a new path to break through the bottleneck of Moore's Law.

At the same time, significant progress has also been made in the field of two-dimensional semiconductors. Yuanjiwei Technology (Shanghai) Co., Ltd. has successfully completed tens of millions of yuan in seed and pre angel round financing, promoting the launch of a two-dimensional semiconductor engineering verification demonstration process line in Shanghai. This is also the first fully independent two-dimensional semiconductor integrated circuit engineering demonstration line in China. When the silicon-based chip process approaches 2 nanometers, it has reached the physical limit of three-dimensional semiconductor materials, while two-dimensional semiconductors, with their "planar highway" structure of atomic layer thickness, have strong gate control capabilities at the short channel scale and can greatly simplify the process. At present, Yuanji Microelectronics has successfully launched the first 32-bit RISC V architecture microprocessor "Wuji" based on two-dimensional semiconductor materials. It plans to achieve heterogeneous integration with silicon-based materials by the end of 2026 and is expected to achieve mass production of the world's first two-dimensional material chip in 2029, which will be applied in low-power edge computing and other scenarios. Global semiconductor giants such as TSMC, Samsung, Intel, etc. have listed two-dimensional semiconductors as a silicon-based alternative to 3-5 nanometer nodes, indicating broad prospects for the development of two-dimensional semiconductor technology.

In addition, the Shanghai Institute of Optics and Mechanics, Chinese Academy of Sciences, has successfully developed the "Meteor 1" ultra-high parallel optical computing integrated chip, making a major breakthrough in solving the problem of high-density information parallel processing of optical chips; The team led by Academician Peng Lianmao and Researcher Qiu Chengguang from the School of Electronics, Peking University, developed a ballistic two-dimensional indium selenide (InSe) transistor, which became the fastest and lowest energy consuming two-dimensional semiconductor transistor in the world at that time; Professor Wang Xinran's team from the School of Integrated Circuits at Nanjing University has developed an air barrier transistor structure, achieving for the first time a two-dimensional semiconductor ring oscillator circuit at GHz frequency. These technological breakthroughs provide strong support for the sustained development of the semiconductor industry.

The market performance is positive and improving

Recently, the semiconductor sector has performed well in the capital market. As of 10:30 am on June 20, 2025, the CSI Semiconductor Materials and Equipment Theme Index (931743) rose strongly by 1.01%, while the Semiconductor Materials ETF (562590) rose by 0.86%, hitting three consecutive gains. On June 20th, the semiconductor chip sector in the Hong Kong stock market continued to rebound, with Huahong Semiconductor (01347. HK) breaking out of its 5-day bullish streak. Tianfeng Securities pointed out that the overall capacity utilization rate of Huahong Semiconductor 1Q25 has reached 102.7%, and the production line is in full capacity. The traditional peak season has entered the second and third quarters, and market demand is becoming increasingly strong.

According to industry data, the data disclosed by the General Administration of Customs shows that the export volume of domestic integrated circuits in the first five months was 526.4 billion yuan, a year-on-year increase of 18.9%. The World Semiconductor Trade Organization (WSTS) has released a forecast that the global semiconductor market will reach $700.9 billion by 2025, a year-on-year increase of 11.2%, mainly driven by sustained demand in areas such as AI, cloud infrastructure, and advanced consumer electronics. Benefiting from the AI driven demand recovery and the continuous promotion of domestic substitution in key areas, the semiconductor industry has entered a period of economic recovery since the second half of 2023. Revenue and net profit attributable to shareholders have achieved year-on-year positive growth in 2024 and Q1 2025, and the recovery trend has continued in the second quarter.

Exciting and diverse industrial activities

On June 20th, the 2025 World Semiconductor Conference and Expo grandly opened in Nanjing. Nearly 200 global companies gathered together to conduct in-depth discussions on topics such as electronic design automation (EDA), high computing chips, advanced packaging, material innovation, and supply chain security, showcasing the relevant innovative achievements of the entire semiconductor industry chain. At the opening ceremony and international summit, attending experts pointed out that China's semiconductor industry is moving from the stage of self-reliance, introduction and absorption to a new stage of innovative development. Taking Jiangsu as an example, the core business revenue of the integrated circuit industry in Jiangsu Province will exceed 365 billion yuan in 2024, maintaining high-speed growth. A number of national and high-energy innovation carriers have been built in advanced packaging and testing, EDA tools, third-generation semiconductors and other fields, and the leading role of innovation support continues to strengthen. This expo lasts for 3 days and also features high-performance chips EDA/IP、 At cutting-edge forums such as Advanced Packaging, Materials and Supply Chain Security, experts will deeply analyze the technological trends and market opportunities in the context of AI technology development and the surge in computing power.

In addition, at the 31st Semiconductor Annual Awards Ceremony, Shandong Tianyue Advanced Technology Co., Ltd. won the gold award in the "Semiconductor Electronic Materials" category for its breakthrough in silicon carbide substrate material technology. This is the first time in 31 years since the establishment of this award that a Chinese company has won this honor in the field of electronic materials. As the cornerstone of third-generation semiconductors, the quality and preparation technology of silicon carbide substrate materials are crucial to the entire industry chain. Tianyue Advanced has made a series of breakthroughs in core areas such as material crystal growth, defect control, and processing technology through long-term technological breakthroughs, overcoming world-class challenges such as large-scale production, and achieving internationally leading material performance. This award is not only an important milestone for Tianyue Advanced, but also reflects the achievements of independent innovation in China's semiconductor materials industry. With the explosive growth of the third-generation semiconductor market, it is expected to reshape the international semiconductor industry pattern.

The positive progress of the semiconductor industry in technological innovation, market performance, and industrial activities has laid a solid foundation for the future development of the industry. It is expected that with the joint promotion of all parties, the semiconductor industry will continue to maintain a good development trend and achieve breakthroughs and innovations in more fields.


Jinghang Semiconductor Materials (Jiangyin) Co., Ltd
Address:No. 12, Yuefa Road, Industrial Park, Yuecheng Town, Jiangyin City
Tel:0510-86596629
Record number:苏ICP备2025191821号-1
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